powerdi is a registered tr ademark of diodes incorporated. dm p4013lfg document number: d s 372 05 rev. 3 - 2 1 of 7 www.diodes.com july 2015 ? diodes incorporated d mp4013lfg advance information 40v p - channel enhancement mode mosfet powerdi ? product summary b v dss r ds(on) max i d max t a = + 25 c - 40v 13 m @ v gs = - 10 v - 10.3 a 18 m ? @ v gs = - 4.5 v - 8.8 a description and applications this mosfet is designed to minimize th e on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C ensures on state losses are minimized . ? small form factor thermally efficient package enables higher density end products . ? occupies 33% of the board area occupied by so - 8 , enabling smaller end product . ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di ? 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture s ensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams ( a pproximate) ordering inf ormation (note 4 ) part number case packaging dm p40 13 l fg - 7 powerdi?3333 - 8 2 , 0 00 /tape & reel dm p40 13 lfg - 13 powerdi?3333 - 8 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products a re defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information top view bottom view powerdi?3333 - 8 p13 = product type marking code yyww = date code marking yy = last digit of year (ex: 1 3 = 201 3 ) ww = week code (01 ~ 53) equivalent circuit p13 y yww powerdi?3333 - 8 s s s g d d d d pin 1 d s g
powerdi is a registered tr ademark of diodes incorporated. dm p4013lfg document number: d s 372 05 rev. 3 - 2 2 of 7 www.diodes.com july 2015 ? diodes incorporated d mp4013lfg advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 4 0 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = - 10 v steady state t a = + 25c t a = + 70c i d - 10.3 - 8.3 a t<10s t a = + 25c t a = + 70c i d - 13.7 - 11 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 80 a maximum continuous body diode f orward current (note 6 ) i s 2.6 a avalanche current , l = 0. 1 mh i as 34 a avalanche energy , l = 0. 1 mh e as 58 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 1 w thermal resistance, junction to ambient (note 5 ) s teady s tate r ? ja 1 23 c/w t<10s 6 9 total power dissipation (note 6 ) p d 2. 1 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ? ja 60 c/w t<10s 34 thermal resistance, junction to case (note 6 ) r ? j c 3 . 3 operating and storage temperature range t j, t stg - 55 to +150 c e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 4 0 gs = 0v, i d = - 2 50a j = +25c i dss ds = - 40 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) - 1 ds = v gs , i d = - 250 a ds (on) gs = - 10 v, i d = - 10 a gs = - 4 .5 v, i d = - 8 a diode forward voltage v sd gs = 0v, i s = - 1 a dynamic characteristics (note 8 ) input capacitance c iss ds = - 2 0 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5 v ) q g ds = - 20 v, i d = - 10 a total gat e charge ( v gs = - 10 v ) q g gs gd d(on) d d = - 20 v , v g en = - 10 v , r g = 3 d = - 10 a turn - on rise time t r d(off) f rr ? ? f = - 10 a, di/dt = 1 0 0a/s rr ? ? notes: 5 . device mounted on fr - 4 pc board, with minimum recomm ended pad layout, single sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1 - inch square copper plate . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
powerdi is a registered tr ademark of diodes incorporated. dm p4013lfg document number: d s 372 05 rev. 3 - 2 3 of 7 www.diodes.com july 2015 ? diodes incorporated d mp4013lfg advance information v , drain -source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 1 2 3 4 5 v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -4.0v gs v = -10v gs v = -4.5v gs v = -3.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.006 0.008 0.01 0.012 0.014 0.016 0 5 10 15 20 25 30 v = -4.5v gs v = -10v gs v , gate-source voltage (v) gs figure 4 typical transfer characteristics r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0.06 0 2 4 6 8 10 12 14 16 18 20 i = 10a d i = 8a d i , drain source current (a) figure 5 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -10v gs 15 20 25 30 t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = -4.5v i = -8a gs d v = -10v i = -10a gs d
powerdi is a registered tr ademark of diodes incorporated. dm p4013lfg document number: d s 372 05 rev. 3 - 2 4 of 7 www.diodes.com july 2015 ? diodes incorporated d mp4013lfg advance information t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 -50 -25 0 25 50 75 100 125 150 v = -10v i = a gs d -10 v = 5v i = a gs d -4. -8 t , ambient temperature (c) figure 8 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250a d v , source-drain voltage (v) figure 9 diode forward voltage vs. current sd i , s o u r c e c u r r e n t ( a ) s 0 5 t = 150 c a ? 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 125 c a ? t = 25 c a ? t = -55 c a ? t = 85 c a ? c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) figure 10 typical junction capacitance ds 100 1000 10000 0 5 10 15 20 25 30 35 40 c oss c rss f = 1mhz c iss q , total gate charge (nc) figure 11 gate-charge characteristics g v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 2 4 6 8 10 0 10 20 30 40 50 60 70 v = -20v i = -10a ds d v , drain-source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d 0.01 0.1 1 10 100 0.1 1 10 100 r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j(max) a v = -10v single pulse gs dut on 1 * mrp board
powerdi is a registered tr ademark of diodes incorporated. dm p4013lfg document number: d s 372 05 rev. 3 - 2 5 of 7 www.diodes.com july 2015 ? diodes incorporated d mp4013lfg advance information t1, pulse duration times (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 119c/w duty cycle, d = t1/ t2 ?? ? ja ja ja 0.001 0.01 0.1 1 1e-04 0.001 0.01 0.1 1 10 100 1000 d = 0.9
powerdi is a registered tr ademark of diodes incorporated. dm p4013lfg document number: d s 372 05 rev. 3 - 2 6 of 7 www.diodes.com july 2015 ? diodes incorporated d mp4013lfg advance information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi?3333 - 8 powerdi ? 3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? ? ? 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e ? ? ? ? 0.65 e1 0.79 0.89 0.84 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm suggested pad layout please see ap0200 1 at http://w ww.diodes.com/datasheets/ap0200 1 .pdf for the latest version. powerdi?3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 e1 1 8 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) x3 y3 x y c y1 y2 x1 x2 1 8
powerdi is a registered tr ademark of diodes incorporated. dm p4013lfg document number: d s 372 05 rev. 3 - 2 7 of 7 www.diodes.com july 2015 ? diodes incorporated d mp4013lfg advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of m erchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes wi thout further notice to this document and any product described herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any li cense under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the compani es whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should custo mers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify a nd hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t o f, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written ap proval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when pr operly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to p erform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5, diodes incorporated www.diodes.com
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